STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 18.9

测试中的平均数值

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 63

左右 -142% 更低的延时
更快的写入速度，GB/s

16.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 26
读取速度，GB/s

3,231.0 18.9
写入速度，GB/s

1,447.3 16.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 3866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C14-8GTZKW 8GB

G Skill Intl F4-3200C14-8GTZKW 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

G Skill Intl F4-3600C18-8GTZN 8GB

G Skill Intl F4-3600C18-8GTZN 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB