STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 63

左右 -117% 更低的延时
更快的写入速度，GB/s

15.9 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 29
读取速度，GB/s

3,231.0 17.9
写入速度，GB/s

1,447.3 15.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 3501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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PNY Electronics PNY 2GB

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AMD AE34G1601U1 4GB

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EVGA 8GX-D4-3200-MR 8GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CMT64GX4M4C3200C16 16GB

Corsair CMT64GX4M4C3200C16 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Asgard VMA45UG-MIC1U22T2 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB