STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Golden Empire CL19-19-19 D4-2666 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Golden Empire CL19-19-19 D4-2666 4GB

需要考虑的原因
Golden Empire CL19-19-19 D4-2666 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 63

左右 -97% 更低的延时
更快的写入速度，GB/s

11.7 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Golden Empire CL19-19-19 D4-2666 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 32
读取速度，GB/s

3,231.0 15.7
写入速度，GB/s

1,447.3 11.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C16-8GVK 8GB

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Mushkin 994083 4GB

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Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

AMD R5316G1609U2K 8GB

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Corsair CMK64GX4M4B3000C15 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Samsung M386A4G40DM0-CPB 32GB

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SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMH16GX4M2Z3600C18 8GB