STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston 9905712-016.A00G 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Kingston 9905712-016.A00G 16GB

Kingston 9905712-016.A00G 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

Kingston 9905712-016.A00G 16GB

需要考虑的原因
Kingston 9905712-016.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 63

左右 -163% 更低的延时
更快的写入速度，GB/s

12.4 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905712-016.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 24
读取速度，GB/s

3,231.0 16.8
写入速度，GB/s

1,447.3 12.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2991

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C19-8GSXF 8GB

Samsung M4 70T2953EZ3-CE6 1GB

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SK Hynix GKE160UD102408-2400 16GB

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G Skill Intl F4-3466C16-16GTZ 16GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

A-DATA Technology AM1L16BC4R1-B1HS 4GB

A-DATA Technology AM1L16BC4R1-B1HS 4GB