STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kllisre M471A1K43CB1-CTD 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 11.4

测试中的平均数值

Kllisre M471A1K43CB1-CTD 8GB

需要考虑的原因
Kllisre M471A1K43CB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 63

左右 -40% 更低的延时
更快的写入速度，GB/s

8.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kllisre M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 45
读取速度，GB/s

3,231.0 11.4
写入速度，GB/s

1,447.3 8.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 2281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664BA160B.C16F 2GB

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Corsair CMW64GX4M4C3466C16 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMD128GX4M8B3200C16 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology BLS8G4D240FSC.16FBD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston KF548C38-16 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-4600C19-8GTZSWC 8GB

Kingston 99U5474-038.A00LF 4GB

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Essencore Limited KD4AGS88C-26N1900 16GB

Essencore Limited KD4AGS88C-26N1900 16GB