STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Maxsun MSD416G26Q3 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

低于PassMark测试中的延时，ns

63 84

左右 25% 更低的延时
更快的读取速度，GB/s

3 12.5

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更快的写入速度，GB/s

7.0 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 84
读取速度，GB/s

3,231.0 12.5
写入速度，GB/s

1,447.3 7.0
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CM4X4GF2400Z16K4 4GB

Corsair CM4X4GF2400Z16K4 4GB

Kingston KHX16 4GB

Kingston KHX16 4GB

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G Skill Intl F4-3600C14-8GTRSB 8GB