STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M378A1K43DB2-CVF 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

Samsung M378A1K43DB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43DB2-CVF 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的写入速度，GB/s

11.8 1,447.3

测试中的平均数值
更高的内存带宽，mbps

23400 5300

左右 4.42 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A1K43DB2-CVF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

3,231.0 15.2
写入速度，GB/s

1,447.3 11.8
内存带宽，mbps

5300 23400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

478 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB