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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung V-GeN D4S8GL32A8TL 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 64
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 16.8
    测试中的平均数值
Samsung V-GeN D4S8GL32A8TL 8GB 需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 64
  • 读取速度，GB/s
    3,231.0 left arrow 16.8
  • 写入速度，GB/s
    1,447.3 left arrow 8.3
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    478 left arrow 2052

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Samsung V-GeN D4S8GL32A8TL 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
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A-DATA Technology DDR4 2400 16GB
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Golden Empire CL15-15-15 D4-2133 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Samsung M471A5143EB1-CRC 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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Kingston KMKYF9-MIH 8GB
内存RAM
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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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SK Hynix GKE160SO102408-3000 16GB
内存RAM
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内存RAM
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Samsung 1600 CL10 Series 8GB
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SK Hynix MMA82GS6CJR8N-VK 16GB
内存RAM
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SK Hynix HYMP512S64CP8-Y5 1GB
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Kingston 99U5663-003.A00G 16GB
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