STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs SK Hynix HMA451R7AFR8N-TF 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

SK Hynix HMA451R7AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451R7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

59 63

左右 -7% 更低的延时
更快的读取速度，GB/s

9 3

测试中的平均数值
更快的写入速度，GB/s

7.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 59
读取速度，GB/s

3,231.0 9.0
写入速度，GB/s

1,447.3 7.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX64GX4M2A2666C18 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

Kingston 9965525-018.A00LF 4GB

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A-DATA Technology DDR4 3600 8GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Samsung M471B1G73EB0-YK0 8GB

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

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Unifosa Corporation GU502203EP0201 1GB

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Crucial Technology BL16G26C16U4B.16FE 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB