RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
SK Hynix V-GeN D4H4GL26A8TL5 4GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
17.7
测试中的平均数值
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL5 4GB
报告一个错误
低于PassMark测试中的延时,ns
58
63
左右 -9% 更低的延时
更快的写入速度,GB/s
9.3
1,447.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
58
读取速度,GB/s
3,231.0
17.7
写入速度,GB/s
1,447.3
9.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
478
1968
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965516-049.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Corsair VS1GB800D2 1GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD8GX4M2B3600C18 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2400C17-4GNT 4GB
Kingston ACR256X64D3S1333C9 2GB
Essencore Limited KD4AGU880-34A170X 16GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology D22.2221ZA.001 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M471A4G43MB1-CTD 32GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Golden Empire CL15-15-15 D4-2666 4GB
Crucial Technology CT102464BF160B-16F 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
A-DATA Technology DDR2 800G 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Samsung M378B5773DH0-CH9 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
报告一个错误
×
Bug description
Source link