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Strontium EVMT8G1600U86S 8GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Strontium EVMT8G1600U86S 8GB vs Crucial Technology CT4G4DFS8213.C8FAR2 4GB

总分
star star star star star
Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

差异 规格 评论

差异

Strontium EVMT8G1600U86S 8GB 需要考虑的原因
Strontium EVMT8G1600U86S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 35
    左右 11% 更低的延时
Crucial Technology CT4G4DFS8213.C8FAR2 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 35
  • 读取速度，GB/s
    11.7 left arrow 14.4
  • 写入速度，GB/s
    7.2 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1990 left arrow 2426

Strontium EVMT8G1600U86S 8GB RAM的比较

Strontium EVMT8G1333U86S 8GB
Corsair CMW16GX4M2Z3200C16 8GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM