Swissbit MEU25664D6BC2EP-30 2GB vs Crucial Technology CT4G4SFS824A.C8FF 4GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Crucial Technology CT4G4SFS824A.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 68

左右 -172% 更低的延时
更快的写入速度，GB/s

11.1 1,944.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 25
读取速度，GB/s

3,973.0 16.1
写入速度，GB/s

1,944.9 11.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

673 2164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CM4X8GF2400C16K4 8GB

Corsair CM4X8GF2400C16K4 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung M393A4K40BB0-CPB 32GB

Samsung M393A4K40BB0-CPB 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK8GX4M1D3000C16 8GB

Corsair CMK8GX4M1D3000C16 8GB