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Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2400C16-16GRS 16GB

Swissbit MEU25664D6BC2EP-30 2GB vs G Skill Intl F4-2400C16-16GRS 16GB

总分
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
G Skill Intl F4-2400C16-16GRS 16GB

G Skill Intl F4-2400C16-16GRS 16GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.1
    测试中的平均数值
G Skill Intl F4-2400C16-16GRS 16GB 需要考虑的原因
G Skill Intl F4-2400C16-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 68
    左右 -84% 更低的延时
  • 更快的写入速度，GB/s
    11.9 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2400C16-16GRS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 37
  • 读取速度，GB/s
    3,973.0 left arrow 15.1
  • 写入速度，GB/s
    1,944.9 left arrow 11.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    673 left arrow 2804

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

G Skill Intl F4-2400C16-16GRS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Mushkin 99[2/7/4]199F 8GB
Mushkin 99[2/7/4]199F 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KMKYF9-HYA 8GB
Kingston KMKYF9-HYA 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3000C15-4GVRB 4GB
G Skill Intl F4-3000C15-4GVRB 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited KD48GU881-26N190D 8GB
Essencore Limited KD48GU881-26N190D 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Avant Technology W642GU42J5213N 16GB
Avant Technology W642GU42J5213N 16GB
内存RAM