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Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3200C16-8GVRB 8GB

Swissbit MEU25664D6BC2EP-30 2GB vs G Skill Intl F4-3200C16-8GVRB 8GB

总分
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
G Skill Intl F4-3200C16-8GVRB 8GB

G Skill Intl F4-3200C16-8GVRB 8GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3200C16-8GVRB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GVRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 68
    左右 -119% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3200C16-8GVRB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 31
  • 读取速度，GB/s
    3,973.0 left arrow 17.7
  • 写入速度，GB/s
    1,944.9 left arrow 13.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    673 left arrow 3313

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

G Skill Intl F4-3200C16-8GVRB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9965589-008.D01G 8GB
Kingston 9965589-008.D01G 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM