Swissbit MEU25664D6BC2EP-30 2GB vs Samsung M378A1G44AB0-CWE 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 68

左右 -79% 更低的延时
更快的写入速度，GB/s

10.9 1,944.9

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

Samsung M378A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 38
读取速度，GB/s

3,973.0 16.5
写入速度，GB/s

1,944.9 10.9
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

673 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Kingston 9965516-049.A00LF 8GB

Kingston 9965516-049.A00LF 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX2666C16/8G 8GB

Kingston KHX2666C16/8G 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Avant Technology W642GU42J9266N8 16GB

Avant Technology W642GU42J9266N8 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB