Swissbit MEU25664D6BC2EP-30 2GB vs V-GEN D4H8GL36A8TXV 8GB

总分

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

差异规格评论

差异

Swissbit MEU25664D6BC2EP-30 2GB

需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB

报告一个错误

更快的读取速度，GB/s

3 20

测试中的平均数值

V-GEN D4H8GL36A8TXV 8GB

需要考虑的原因
V-GEN D4H8GL36A8TXV 8GB

报告一个错误

低于PassMark测试中的延时，ns

53 68

左右 -28% 更低的延时
更快的写入速度，GB/s

9.4 1,944.9

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Swissbit MEU25664D6BC2EP-30 2GB

V-GEN D4H8GL36A8TXV 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 53
读取速度，GB/s

3,973.0 20.0
写入速度，GB/s

1,944.9 9.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

673 2366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Kingston K000MD44U 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-3200C14-8GTRG 8GB

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Samsung M378B5173BH0-CH9 4GB

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V-Color Technology Inc. TL48G30S816KRGB 8GB

V-Color Technology Inc. TL48G30S816KRGB 8GB

Unifosa Corporation HU564404EP0200 4GB

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Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB