takeMS International AG TMS2GB264D082-805G 2GB vs Corsair CMK32GX4M2A2133C13 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 15.5

测试中的平均数值

Corsair CMK32GX4M2A2133C13 16GB

需要考虑的原因
Corsair CMK32GX4M2A2133C13 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

11.0 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMK32GX4M2A2133C13 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

5,535.6 15.5
写入速度，GB/s

1,852.4 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2937

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMW16GX4M2E3200C16 8GB

Corsair CMW16GX4M2E3200C16 8GB

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Kingston ACR512X64D3S13C9G 4GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston KVR800D2N6/2G 2GB

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Kingston 99U5678-029.A00G 8GB

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Kingston 9905471-071.A00LF 8GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB