takeMS International AG TMS2GB264D082-805G 2GB vs Corsair CMV16GX4M1A2666C18 16GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Corsair CMV16GX4M1A2666C18 16GB

Corsair CMV16GX4M1A2666C18 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 14

测试中的平均数值

Corsair CMV16GX4M1A2666C18 16GB

需要考虑的原因
Corsair CMV16GX4M1A2666C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的写入速度，GB/s

11.3 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMV16GX4M1A2666C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

5,535.6 14.0
写入速度，GB/s

1,852.4 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB