takeMS International AG TMS2GB264D082-805G 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 12

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更快的写入速度，GB/s

6.6 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

5,535.6 12.0
写入速度，GB/s

1,852.4 6.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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SK Hynix HMA451R7AFR8N-TF 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingston 9905403-444.A00LF 4GB

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Essencore Limited IM44GU48N21-FFFHM 4GB

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Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

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Corsair CMD64GX4M4C3200C16 16GB