takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3400C16-8GTZKW 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 15.5

测试中的平均数值

G Skill Intl F4-3400C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3400C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更快的写入速度，GB/s

10.6 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3400C16-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

5,535.6 15.5
写入速度，GB/s

1,852.4 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5273CH0-CH9 4GB

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Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A1K43CB1-CRCR 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

AMD R7S48G2400U2S 8GB

AMD R7S48G2400U2S 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Transcend Information JM2666HSE-16G 16GB

Transcend Information JM2666HSE-16G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX3000C16/16GX 16GB

Kingston KHX3000C16/16GX 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB