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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB

takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C19-16GSXF 16GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.8
    测试中的平均数值
G Skill Intl F4-3600C19-16GSXF 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GSXF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 46
    左右 -109% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 22
  • 读取速度，GB/s
    5,535.6 left arrow 18.8
  • 写入速度，GB/s
    1,852.4 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3310

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

G Skill Intl F4-3600C19-16GSXF 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
G Skill Intl F4-3600C19-16GSXF 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2400C16-8GFX 8GB
G Skill Intl F4-2400C16-8GFX 8GB
内存RAM
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5471-016.A00LF 8GB
Corsair CMK32GX4M2A2400C14 16GB
Corsair CMK32GX4M2A2400C14 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
内存RAM
Nanya Technology M2F8G64CB8HC5N-DI 8GB
Nanya Technology M2F8G64CB8HC5N-DI 8GB
G Skill Intl F4-2666C18-8GFX 8GB
G Skill Intl F4-2666C18-8GFX 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C15-8GTRG 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM