takeMS International AG TMS2GB264D082-805G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

takeMS International AG TMS2GB264D082-805G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 10

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

8.5 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

5,535.6 10.0
写入速度，GB/s

1,852.4 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-8GTRG 8GB

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Kingston 9905744-076.A00G 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Teikon TMA851S6AFR6N-UHHC 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

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Kingston 9905471-006.A00LF 4GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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