takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Kingmax Semiconductor GLAG42F-18---------- 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 14.5

测试中的平均数值

Kingmax Semiconductor GLAG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GLAG42F-18---------- 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 -70% 更低的延时
更快的写入速度，GB/s

7.4 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 27
读取速度，GB/s

5,535.6 14.5
写入速度，GB/s

1,852.4 7.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology D12.2356WS.001 8GB

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A-DATA Technology DQKD1A08 1GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9965433-034.A00LF 4GB

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Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB