takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 9965589-037.D00G 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston 9965589-037.D00G 8GB

Kingston 9965589-037.D00G 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

Kingston 9965589-037.D00G 8GB

需要考虑的原因
Kingston 9965589-037.D00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的读取速度，GB/s

9.4 5

测试中的平均数值
更快的写入速度，GB/s

6.8 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9965589-037.D00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

5,535.6 9.4
写入速度，GB/s

1,852.4 6.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMK16GX4M2L3200C16 8GB

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PNY Electronics PNY 2GB

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Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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G Skill Intl F4-2400C15-16GTZR 16GB

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Samsung 1600 CL10 Series 8GB

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SK Hynix HMA81GS6CJR8N-XN 8GB

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

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SK Hynix HMT351S6CFR8C-PB 4GB

Essencore Limited KD48GU880-26N160T 8GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB