takeMS International AG TMS2GB264D082-805G 2GB vs V-GEN D4H4GS24A8 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 94

左右 51% 更低的延时
更快的读取速度，GB/s

5 14.7

测试中的平均数值

V-GEN D4H4GS24A8 4GB

需要考虑的原因
V-GEN D4H4GS24A8 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

V-GEN D4H4GS24A8 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 94
读取速度，GB/s

5,535.6 14.7
写入速度，GB/s

1,852.4 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X16GE2933C19S2 16MB

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Samsung M471B5173DB0-YK0 4GB

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Golden Empire CL16-16-16 D4-3000 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kllisre 99P54280002.A00LF 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M471A5143SB1-CRC 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB