takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMD8GX4M2B3000C15 4GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 18.5

测试中的平均数值

Corsair CMD8GX4M2B3000C15 4GB

需要考虑的原因
Corsair CMD8GX4M2B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 50

左右 -138% 更低的延时
更快的写入速度，GB/s

14.2 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMD8GX4M2B3000C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 21
读取速度，GB/s

3,757.3 18.5
写入速度，GB/s

1,457.4 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 2930

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351U6CFR8C-H9 4GB

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Kingston KHX3000C16D4/16GX 16GB

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Kingston 9905403-134.A00LF 2GB

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Corsair VS2GB1333D4 2GB

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DSL Memory CIR-W4SUSS2408G 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Kingston 99P5471-002.AOOLF 4GB

Kingston 99P5471-002.AOOLF 4GB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB