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takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMT16GX4M2C3466C16 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.1
    测试中的平均数值
Corsair CMT16GX4M2C3466C16 8GB 需要考虑的原因
Corsair CMT16GX4M2C3466C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 50
    左右 -150% 更低的延时
  • 更快的写入速度，GB/s
    14.3 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 20
  • 读取速度，GB/s
    3,757.3 left arrow 17.1
  • 写入速度，GB/s
    1,457.4 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 3088

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMT16GX4M2C3466C16 8GB RAM的比较

Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4400C17-16GVK 16GB
G Skill Intl F4-4400C17-16GVK 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KH280C14D4/8X 8GB
Kingston KH280C14D4/8X 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
内存RAM