takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology BLE16G4D32AEEA.K16FB 16GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

需要考虑的原因
Crucial Technology BLE16G4D32AEEA.K16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 50

左右 -72% 更低的延时
更快的写入速度，GB/s

14.8 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 29
读取速度，GB/s

3,757.3 16.6
写入速度，GB/s

1,457.4 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 3490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CM4B8G1L2666A18S4 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Mushkin 99[2/7/4]190F 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 9965596-023.B01G 8GB

Kingston 9965596-023.B01G 8GB