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takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2933C14-8GTZRX 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-2933C14-8GTZRX 8GB

总分
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 54
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 17.5
    测试中的平均数值
G Skill Intl F4-2933C14-8GTZRX 8GB 需要考虑的原因
G Skill Intl F4-2933C14-8GTZRX 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.3 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2933C14-8GTZRX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 54
  • 读取速度，GB/s
    3,757.3 left arrow 17.5
  • 写入速度，GB/s
    1,457.4 left arrow 9.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2264

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2933C14-8GTZRX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Ramaxel Technology RMR1810EC58E8F1333 2GB
Ramaxel Technology RMR1810EC58E8F1333 2GB
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2933C14-8GTZRX 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F4-3200C14-8GTRS 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-4400C19-32GVK 32GB
G Skill Intl F4-4400C19-32GVK 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM