takeMS International AG TMS2GB264D083805EV 2GB vs SK Hynix HMAA2GS6CJR8N-XN 16GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 55

左右 9% 更低的延时
更快的读取速度，GB/s

3 16

测试中的平均数值

SK Hynix HMAA2GS6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMAA2GS6CJR8N-XN 16GB

报告一个错误

更快的写入速度，GB/s

12.9 1,457.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 55
读取速度，GB/s

3,757.3 16.0
写入速度，GB/s

1,457.4 12.9
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

557 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

Kingston KVR533D2N4 512MB

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Avant Technology F6451U64F9333G 4GB

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Apacer Technology 78.CAGNT.AR40B 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M471B5273EB0-CK0 4GB

Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

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Samsung M393B1G70BH0-YK0 8GB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB