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takeMS International AG TMS2GB264D083805EV 2GB
Transcend Information TS2GSH64V6B 16GB

takeMS International AG TMS2GB264D083805EV 2GB vs Transcend Information TS2GSH64V6B 16GB

总分
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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分
star star star star star
Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D083805EV 2GB 需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.4
    测试中的平均数值
Transcend Information TS2GSH64V6B 16GB 需要考虑的原因
Transcend Information TS2GSH64V6B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 50
    左右 -117% 更低的延时
  • 更快的写入速度，GB/s
    14.4 left arrow 1,457.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Transcend Information TS2GSH64V6B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 23
  • 读取速度，GB/s
    3,757.3 left arrow 16.4
  • 写入速度，GB/s
    1,457.4 left arrow 14.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    557 left arrow 2978

takeMS International AG TMS2GB264D083805EV 2GB RAM的比较

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Transcend Information TS2GSH64V6B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMK32GX4M2K4133C19 16GB
Corsair CMK32GX4M2K4133C19 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
内存RAM