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Team Group Inc. Team-Value-800 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB

Team Group Inc. Team-Value-800 2GB vs Micron Technology 8ATF51264HZ-2G1B1 4GB

总分
star star star star star
Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

总分
star star star star star
Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

差异 规格 评论

差异

Team Group Inc. Team-Value-800 2GB 需要考虑的原因
Team Group Inc. Team-Value-800 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.3
    测试中的平均数值
Micron Technology 8ATF51264HZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264HZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 54
    左右 -59% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,952.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Team-Value-800 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 34
  • 读取速度，GB/s
    4,586.7 left arrow 14.3
  • 写入速度，GB/s
    1,952.2 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    704 left arrow 2201

Team Group Inc. Team-Value-800 2GB RAM的比较

Corsair VS2GB800D2 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Micron Technology 8ATF51264HZ-2G1B1 4GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston KVR800D2N6/2G 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4133C19-8GTZR 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Avant Technology F6451U64F9333G 4GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Crucial Technology CT4G4SFS8213.C8FBR2 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
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SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
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Elpida EBE21UE8ACUA-8G-E 2GB
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Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
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Kingston 99U5700-028.A00G 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM