Team Group Inc. UD5-6400 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Team Group Inc. UD5-6400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

总分

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

差异规格评论

差异

Team Group Inc. UD5-6400 16GB

需要考虑的原因
Team Group Inc. UD5-6400 16GB

报告一个错误

低于PassMark测试中的延时，ns

21 29

左右 28% 更低的延时
更快的读取速度，GB/s

15 13.8

测试中的平均数值
更快的写入速度，GB/s

13.9 11.0

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

报告一个错误

规格

完整的技术规格清单

Team Group Inc. UD5-6400 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

21 29
读取速度，GB/s

15.0 13.8
写入速度，GB/s

13.9 11.0
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3774 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information AQD-SD4U4GN21-SG 4GB

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Micron Technology 4ATF51264HZ-2G6E1 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMK64GX4M8X4000C19 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Crucial Technology CT51264BF160B.M16F 4GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-3000C14-16GVKD 16GB

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Samsung M378B1G73QH0-CK0 8GB

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Corsair CMW32GX4M4K3733C17 8GB

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