Team Group Inc. UD5-6400 16GB vs Kingston ACR26D4U9S8ME-8X 8GB

总分

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分

Kingston ACR26D4U9S8ME-8X 8GB

Kingston ACR26D4U9S8ME-8X 8GB

差异规格评论

差异

Team Group Inc. UD5-6400 16GB

需要考虑的原因
Team Group Inc. UD5-6400 16GB

报告一个错误

低于PassMark测试中的延时，ns

21 30

左右 30% 更低的延时
更快的写入速度，GB/s

13.9 12.8

测试中的平均数值

Kingston ACR26D4U9S8ME-8X 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8X 8GB

报告一个错误

更快的读取速度，GB/s

15.5 15

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Team Group Inc. UD5-6400 16GB

Kingston ACR26D4U9S8ME-8X 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

21 30
读取速度，GB/s

15.0 15.5
写入速度，GB/s

13.9 12.8
内存带宽，mbps

19200 21300

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3774 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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Kingston ACR26D4U9S8ME-8X 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

INTENSO 5641162 8GB

INTENSO 5641162 8GB

Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 9905701-003.A00G 16GB

Kingston 9905701-003.A00G 16GB