Team Group Inc. Vulcan-1600 4GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

总分

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

差异规格评论

差异

Team Group Inc. Vulcan-1600 4GB

需要考虑的原因
Team Group Inc. Vulcan-1600 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的读取速度，GB/s

17 14.3

测试中的平均数值
更快的写入速度，GB/s

12.9 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Team Group Inc. Vulcan-1600 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

14.3 17.0
写入速度，GB/s

8.7 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2376 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston 9905471-006.A01LF 4GB

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Apacer Technology 78.C1GQB.4032B 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3200C16-16GFX 16GB

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Kingston 9905471-001.A01LF 2GB

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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology DOVF1B163G2G 2GB

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Apacer Technology 78.C1GMW.AUC0B 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9905630-052.A00G 16GB

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Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

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Samsung 1600 CL10 Series 8GB

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Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB