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Transcend Information AQD-D4U4GN21-SG 4GB
Kingston KVR800D2E5-2G 2GB

Transcend Information AQD-D4U4GN21-SG 4GB vs Kingston KVR800D2E5-2G 2GB

总分
star star star star star
Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

总分
star star star star star
Kingston KVR800D2E5-2G 2GB

Kingston KVR800D2E5-2G 2GB

差异 规格 评论

差异

Transcend Information AQD-D4U4GN21-SG 4GB 需要考虑的原因
Transcend Information AQD-D4U4GN21-SG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 63
    左右 63% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66% 更高的带宽
Kingston KVR800D2E5-2G 2GB 需要考虑的原因
Kingston KVR800D2E5-2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    3,139.2 left arrow 12.2
    测试中的平均数值

规格

完整的技术规格清单
Transcend Information AQD-D4U4GN21-SG 4GB
Kingston KVR800D2E5-2G 2GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR2
  • PassMark中的延时，ns
    23 left arrow 63
  • 读取速度，GB/s
    16.6 left arrow 4,027.7
  • 写入速度，GB/s
    12.2 left arrow 3,139.2
  • 内存带宽，mbps
    17000 left arrow 6400
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    2712 left arrow 739

Transcend Information AQD-D4U4GN21-SG 4GB RAM的比较

Kingston KF2933C17S4/16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KVR800D2E5-2G 2GB RAM的比较

Kingston KP223C-ELD 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Transcend Information JM1333KSN-4G 4GB
Transcend Information JM1333KSN-4G 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston ACR26D4S9S8HJ-8 8GB
Kingston ACR26D4S9S8HJ-8 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Mushkin MR[A/B]4U300JJJM8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Mushkin 99[2/7/4]205[F/T] 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM