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TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMH32GX4M2E3200C16 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMH32GX4M2E3200C16 16GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 13.8
    测试中的平均数值
Corsair CMH32GX4M2E3200C16 16GB 需要考虑的原因
Corsair CMH32GX4M2E3200C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 87
    左右 -156% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMH32GX4M2E3200C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 34
  • 读取速度，GB/s
    3,155.6 left arrow 18.4
  • 写入速度，GB/s
    870.4 left arrow 13.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3447

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Corsair CMH32GX4M2E3200C16 16GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMD64GX4M4B2800C14 16GB
Corsair CMD64GX4M4B2800C14 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMH32GX4M2E3200C16 16GB
Corsair CMH32GX4M2E3200C16 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK64GX4M4B3333C16 16GB
Corsair CMK64GX4M4B3333C16 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology 76.D305G.D390B 16GB
Apacer Technology 76.D305G.D390B 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
内存RAM
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
内存RAM