TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMK64GX4M2A2666C16 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值
更快的写入速度，GB/s

870.4 13.3

测试中的平均数值

Corsair CMK64GX4M2A2666C16 32GB

需要考虑的原因
Corsair CMK64GX4M2A2666C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 87

左右 -181% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK64GX4M2A2666C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 31
读取速度，GB/s

3,155.6 17.0
写入速度，GB/s

870.4 13.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3602

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/4G 4GB

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Kingston ACR26D4U9S8HJ-8 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M471A2G43BB2-CWE 16GB

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Samsung M393B1K70QB0-CK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB