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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
比较
TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3200C14-16GTZKO 16GB
总分
TwinMOS 8DHE3MN8-HATP 2GB
总分
G Skill Intl F4-3200C14-16GTZKO 16GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
更快的读取速度,GB/s
3
21.3
测试中的平均数值
更快的写入速度,GB/s
870.4
15.8
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3200C14-16GTZKO 16GB
报告一个错误
低于PassMark测试中的延时,ns
18
87
左右 -383% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
87
18
读取速度,GB/s
3,155.6
21.3
写入速度,GB/s
870.4
15.8
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
417
3778
TwinMOS 8DHE3MN8-HATP 2GB RAM的比较
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
G Skill Intl F4-3200C14-16GTZKO 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology ADOVE1A0834E 1GB
Kingston KHX3333C17D4/4GX 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-3200C14-8GTZN 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M2A2800C16 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3466C16-16GTZ 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Samsung M471A2K43CB1-CTCT 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3600C18-32GTZN 32GB
Apacer Technology 78.C1GET.9K10C 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
AMD R538G1601U2S 8GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
AMD R538G1601U2S 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43EB1-CWE 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905625-029.A00G 8GB
报告一个错误
×
Bug description
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