TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3200C15-16GTZSK 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.3

测试中的平均数值
更快的写入速度，GB/s

870.4 15.8

测试中的平均数值

G Skill Intl F4-3200C15-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 87

左右 -278% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-16GTZSK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 23
读取速度，GB/s

3,155.6 19.3
写入速度，GB/s

870.4 15.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3964

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston MSI24D4U7S8MB-8 8GB

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Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB