TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3333C16-8GVR 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值
更快的写入速度，GB/s

870.4 11.3

测试中的平均数值

G Skill Intl F4-3333C16-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 87

左右 -278% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3333C16-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 23
读取速度，GB/s

3,155.6 15.8
写入速度，GB/s

870.4 11.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMR64GX4M4C3000C15 16GB

Corsair CMR64GX4M4C3000C15 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965589-033.D00G 8GB

Kingston 9965589-033.D00G 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

Apacer Technology 75.A73AA.G03 2GB

Apacer Technology 75.A73AA.G03 2GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB