TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3600C17-4GTZ 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 21

测试中的平均数值
更快的写入速度，GB/s

870.4 17.7

测试中的平均数值

G Skill Intl F4-3600C17-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 87

左右 -295% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3600C17-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 22
读取速度，GB/s

3,155.6 21.0
写入速度，GB/s

870.4 17.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Kingston 99P5471-002.AOOLF 4GB

Kingston 99P5471-002.AOOLF 4GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB