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TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905734-061.A00G 32GB

TwinMOS 8DHE3MN8-HATP 2GB vs Kingston 9905734-061.A00G 32GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
Kingston 9905734-061.A00G 32GB

Kingston 9905734-061.A00G 32GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 11.7
    测试中的平均数值
Kingston 9905734-061.A00G 32GB 需要考虑的原因
Kingston 9905734-061.A00G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 87
    左右 -135% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905734-061.A00G 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 37
  • 读取速度，GB/s
    3,155.6 left arrow 14.3
  • 写入速度，GB/s
    870.4 left arrow 11.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    417 left arrow 2841

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Kingston 9905734-061.A00G 32GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Corsair CMD16GX4M4C3200C16 4GB
Corsair CMD16GX4M4C3200C16 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM