TwinMOS 8DHE3MN8-HATP 2GB vs Kingston XJ69DF-MIE 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值
更快的写入速度，GB/s

870.4 13.5

测试中的平均数值

Kingston XJ69DF-MIE 8GB

需要考虑的原因
Kingston XJ69DF-MIE 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 87

左右 -172% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston XJ69DF-MIE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 32
读取速度，GB/s

3,155.6 16.3
写入速度，GB/s

870.4 13.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 3117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Essencore Limited KD44GU480-26N160T 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905744-077.A00G 16GB

Kingston 9905744-077.A00G 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

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Corsair CMD8GX3M2A2933C12 4GB

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB