TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值
更快的写入速度，GB/s

870.4 12.1

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 87

左右 -149% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 35
读取速度，GB/s

3,155.6 15.7
写入速度，GB/s

870.4 12.1
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-056.A00LF 8GB

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Corsair CMU32GX4M2A2666C16 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Transcend Information TS512MLH64V4H 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CM4X16GC3200C16K2E 16GB

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AMD R538G1601U2S-UO 8GB

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Crucial Technology CT8G4SFS8266.C8FJ 8GB

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