TwinMOS 8DHE3MN8-HATP 2GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.7

测试中的平均数值
更快的写入速度，GB/s

870.4 17.0

测试中的平均数值

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 87

左右 -235% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 26
读取速度，GB/s

3,155.6 19.7
写入速度，GB/s

870.4 17.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 3842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Panram International Corporation W4U2666PS-8GC19 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Crucial Technology BL16G36C16U4WL.M16FE 16GB

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Kingmax Semiconductor KLDD48F-B8KW6 1GB

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Samsung M378T5663DZ3-CF7 2GB