TwinMOS 8DHE3MN8-HATP 2GB vs Samsung M393A4K40BB1-CRC 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 10.6

测试中的平均数值
更快的写入速度，GB/s

870.4 8.0

测试中的平均数值

Samsung M393A4K40BB1-CRC 32GB

需要考虑的原因
Samsung M393A4K40BB1-CRC 32GB

报告一个错误

低于PassMark测试中的延时，ns

51 87

左右 -71% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M393A4K40BB1-CRC 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 51
读取速度，GB/s

3,155.6 10.6
写入速度，GB/s

870.4 8.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFD8213.C16FADP 8GB

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Kingston KF552C40-16 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471B5273DH0-CH9 4GB

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Apacer Technology 78.CAGPP.ARW0B 8GB

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Kingston KF552C40-16 16GB

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G Skill Intl F4-4266C17-16GTRGB 16GB

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AMD R538G1601U2S 8GB

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Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

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Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

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Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB