TwinMOS 8DHE3MN8-HATP 2GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

870.4 8.3

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

71 87

左右 -23% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 71
读取速度，GB/s

3,155.6 15.5
写入速度，GB/s

870.4 8.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 1902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR64GX4M4C3000C15 16GB

Corsair CMR64GX4M4C3000C15 16GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB