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TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs A-DATA Technology AO2P24HC8T1-BTBS 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.7
    测试中的平均数值
A-DATA Technology AO2P24HC8T1-BTBS 8GB 需要考虑的原因
A-DATA Technology AO2P24HC8T1-BTBS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 53
    左右 -51% 更低的延时
  • 更快的写入速度，GB/s
    7.9 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 35
  • 读取速度，GB/s
    3,726.4 left arrow 13.7
  • 写入速度，GB/s
    1,590.1 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2237

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB RAM的比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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A-DATA Technology AO2P24HC8T1-BTBS 8GB
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内存RAM
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Corsair CMSX16GX4M2A3000C18 8GB
内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Apacer Technology D12.2326WH.001 16GB
内存RAM