TwinMOS 8DPT5MK8-TATP 2GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 53

左右 -141% 更低的延时
更快的写入速度，GB/s

13.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 22
读取速度，GB/s

3,726.4 17.3
写入速度，GB/s

1,590.1 13.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.01G86.9H50C 1GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Samsung 1600 CL10 Series 8GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-2666C18-32GRS 32GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMD16GX4M2A2400C14 8GB

Corsair CMD16GX4M2A2400C14 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 99U5643-001.A00G 8GB

Kingston 99U5643-001.A00G 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB